产品型号 类型 输出通道 电压(V) RDS(ON)(mΩ) IDSS(uA) 最大电流(mA) 特征 封装 规格书
LPM9007 P Channel 1 -30 52mΩ@VGS=-10V 1 4000 Low impedance, Fast response, Small volume SOT23

30V/4A P-Channel Enhancement Mode Field Effect Transistor

General Description

The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications, notebook computer power management and other battery powered circuits where it is high-side switching.


 Portable Media Players
 Cellular and Smart mobile phone
 DSC Sensor
 Wireless Card



 -30V/-3.0A, RDC(ON)=52mΩ(typ.)@VGS=-4.5V
 ■ -30V/-3.0A,RDC(ON)=80mΩ(typ.)@VGS=-2.5V
 ■ Super high density cell design for extremely low RDC(ON)
 ■ SOT23 Package

Marking Information

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