产品型号 类型 输出通道 电压(V) RDS(ON)(mΩ) IDSS(uA) 最大电流(mA) 特征 封装 规格书
LPM9017 P Channel 1 -30 68mΩ@VGS=-4.5V 1 4000 Low impedance, Quick response,Small current SOT23

P-Channel Enhancement Mode Field Effect Transistor

General Description

The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.


Portable Media Players
Cellular and Smart mobile phone
DSC Sensor
Wireless Card



-30V/-4A,RDS(ON) <58mΩ(typ.)@VGS=-10V
Super high density cell design for extremely low RDS(ON)
SOT23 Package

Marking Information

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