产品型号 类型 输出通道 电压(V) RDS(ON)(mΩ) IDSS(uA) 最大电流(mA) 特征 封装 规格书
LPM3401 P Channel 1 -15 50mΩ@VGS=-4.5V 1 4200 Low impedance, Quick response,Small current SOT23

15V/4A P-Channel Enhancement Mode Field Effect Transistor

General Description

The LPM3401 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.


 Portable Media Players/MP3 players
 Cellular and Smart mobile phone
 DSC Sensor
 Wireless Card



 -15V/-4.0A,RDS(ON)<58mΩ(typ.)@VGS=-10V
 -15V/-3.0A,RDS(ON)<68mΩ(typ.)@VGS=-4.5V
 Super high density cell design for extremely low RDS(ON)
 SOT23 Package

Marking Information

Please see specification. 
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