产品型号 类型 输出通道 电压(V) RDS(ON)(mΩ) IDSS(uA) 最大电流(mA) 特征 封装 规格书
LPM9029C N+P 2 20/-30 50mΩ@VGS=-4.5V 1 6500+4500 Low impedance,Quick response,Small volume SOP8

N and P-Channel Enhancement Power MOSFET

General Description

The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9029C is Pb-free and Halogen-free.


 Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit
 Power Switch
 Load Switch
 Charging



 Trench Technology
RNDS(ON) < 26mΩ @ VGS=2.5V
RNDS(ON) < 20mΩ @ VGS=4.5V
VPDS=-20V, IPD=-4.5A
RPDS(ON) < 100mΩ @ VGS=-2.5V
RPDS(ON) < 68mΩ @ VGS=-4.5V
 Super high density cell design
 Extremely Low Threshold Voltage
 Small package SOP-8

Marking Information

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