产品型号 类型 输出通道 电压(V) RDS(ON)(mΩ) IDSS(uA) 最大电流(mA) 特征 封装 规格书
LPM8205 N Channel 2 20 16.5mΩ@VGS=10V 1 7600 Low impedance,Quick response,Small volume SOT23-6/TSSOP8

Dual N -Channel Enhancement Power MOSFET

General Description

The LPM8205 integrates two N-Channel EnhancementMOSFET Transistor. It uses advanced trenchtechnology and design to provide excellentRDS(ON)with lowgate charge. This device is suitable for using in DC-DC conversion, power switch and chargingcircuit.Standard Product LPM8205 is Pb-free andHalogen-free.


 Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit
 Power Switch
 Load Switch
 Charging



 100% EAS Guaranteed
 Green Device Available
 Super Low Gate Charge
 Excellent CdV/dt effect decline
 Advanced high cell density Trenchtechnology

Marking Information

Please see specification. 
Please ask our service mailbox for what you want which is marketing@lowpowersemi.com.
We will send a copy to you as fast as we can.


业务咨询热线:0755-33000088 电子邮件:marketing@lowpowersemi.com Copyright © LPS Consulting 2005,All Right Reserved. 粤ICP备14043779号