产品型号 类型 输出通道 电压(V) RDS(ON)(mΩ) IDSS(uA) 最大电流(mA) 特征 封装 规格书
LPM3414 N Channel 1 20 48mΩ@VGS=-4.5V 1 3000 Low impedance,Quick response,Small volume SOT23

20V/3A N-Channel Enhancement Mode Field Effect Transistor

General Description

The LPM3414 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications, notebook computer power management and other battery powered circuits where high-side switching is needed.


 Portable Media Players/MP3 players
 Cellular and Smart mobile phone
 DSC Sensor
 Wireless Card



20V/3A, RDS(ON)<62mΩ(max.)@VGS=4.5V
 20V/2.5A, RDS(ON)<86mΩ(max.)@VGS=2.5V
 Super high density cell design for extremely low
 SOT23 Package

Marking Information

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