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概述
The LPM3401 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
应用
◆ Portable Media Players/MP3 players
◆ Cellular and Smart mobile phone
◆ LCD
◆ DSC Sensor
◆ Wireless Card
数据参数
数据参数
封装
SOT23
DS电压最大值(V)
-30
GS电压最大值(V)
±12
VGS(TH) -TYP(V)
-0.9
输出电流(A)
4.2
RDSON (mΩ) at VGS=2.5V (TYP)
85
RDSON (mΩ) at VGS=2.5V (MAX)
120
RDSON (mΩ) at VGS=4.5V (TYP)
58
RDSON (mΩ) at VGS=4.5V (MAX)
68
RDSON (mΩ) at VGS=10V (TYP)
45
RDSON (mΩ) at VGS=10V (MAX)
53
Category
Trench
特征
特征
◆ -15V/-4.0A,RDS(ON)<58mΩ(typ.)@VGS=-10V
◆ -15V/-3.0A,RDS(ON)<68mΩ(typ.)@VGS=-4.5V
◆ Super high density cell design for extremely low RDS(ON)
◆ SOT23 Package
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