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概述
The LPM4953 integrates two P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and chargingcircuit. Standard Product LPM4953 is Pb-free and Halogen-free.
应用
◆ Driver for Relay, Solenoid, Motor, LED etc.
◆ DC-DC converter circuit
◆ Power Switch
◆ Load Switch
◆ Charging
数据参数
数据参数
封装
SOP-8
DS电压最大值(V)
-30
GS电压最大值(V)
±12
VGS(TH) -TYP(V)
-1.7
输出电流(A)
5
RDSON (mΩ) at VGS=2.5V (TYP)
-
RDSON (mΩ) at VGS=2.5V (MAX)
-
RDSON (mΩ) at VGS=4.5V (TYP)
65
RDSON (mΩ) at VGS=4.5V (MAX)
80
RDSON (mΩ) at VGS=10V (TYP)
42
RDSON (mΩ) at VGS=10V (MAX)
50
Category
Trench
特征
特征
◆ Trench Technology
◆ PMOS: VDS=-15V
RDS(ON) < 65mΩ, ID=3.6A @ VGS=-4.5V
RDS(ON) < 42mΩ, ID=5A @ VGS=-10V
◆ Super high density cell design
◆ Extremely Low Threshold Voltage
◆ Small package SOP-8
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