LPM9017 30V/4A P-Channel Enhancement Mode Field Effect Transistor
规格书下载
转存邮件
LPM9017
转存邮件
概述
The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
应用
◆ Portable Media Players ◆ Cellular and Smart mobile phone ◆ LCD ◆ DSC Sensor ◆ Wireless Card
数据参数
数据参数
封装
SOT23
DS电压最大值(V)
-30
GS电压最大值(V)
±12
VGS（TH） -TYP(V)
-0.9
输出电流(A)
4
RDSON (mΩ) at VGS=2.5V （TYP)
85
RDSON (mΩ) at VGS=2.5V （MAX)
95
RDSON (mΩ) at VGS=4.5V （TYP)
64
RDSON (mΩ) at VGS=4.5V （MAX)
68
RDSON (mΩ) at VGS=10V （TYP)
55
RDSON (mΩ) at VGS=10V （MAX)
58
Category
Trench
特征
特征
◆ -30V/-4.0A,RDS(ON)＜58mΩ(typ.)@VGS=-10V ◆ -30V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V ◆ Super high density cell design for extremely low RDS(ON) ◆ SOT23 Package
