The LPM8205 integrates two N-Channel Enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON)with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM8205 is Pb-free and Halogen-free.
应用
◆ Driver for Relay, Solenoid, Motor, LED etc. ◆ DC-DC converter circuit ◆ Power Switch ◆ Load Switch ◆ Charging
数据参数
数据参数
封装
SOT23-6/TSSOP8
DS电压最大值(V)
20
VGS电压最大值(V)
±12
VGS（TH） -TYP(V)
0.75
输出电流(A)
7.6
RDSON (mΩ) at VGS=2.5V （TYP)
28
RDSON (mΩ) at VGS=2.5V （MAX)
33
RDSON (mΩ) at VGS=4.5V （TYP)
20
RDSON (mΩ) at VGS=4.5V （MAX)
25
RDSON (mΩ) at VGS=10V （TYP)
-
RDSON (mΩ) at VGS=10V （MAX)
-
Category
Trench
特征
特征
◆ 100% EAS Guaranteed ◆ Green Device Available ◆ Super Low Gate Charge ◆ Excellent CdV/dt effect decline ◆ Advanced high cell density Trenchtechnology
