微源半导体

概述

The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9029C is Pb-free and Halogen-free.

应用

◆ Driver for Relay, Solenoid, Motor, LED etc.
◆ DC-DC converter circuit
◆ Power Switch
◆ Load Switch
◆ Charging

数据参数

封装

SOP8

DS电压最大值(V)

20/-30

GS电压最大值(V)

±10

VGS（TH） -TYP(V)

0.65 / -0.65

输出电流(A)

6.5+4.5

RDSON (mΩ) at VGS=2.5V （TYP)

RDSON (mΩ) at VGS=2.5V （MAX)

26(N-MOS) /100(P-MOS)

RDSON (mΩ) at VGS=4.5V （TYP)

RDSON (mΩ) at VGS=4.5V （MAX)

20(N-MOS) /68(P-MOS)

RDSON (mΩ) at VGS=10V （TYP)

RDSON (mΩ) at VGS=10V （MAX)

Category

Trench

特征

◆ Trench Technology
◆ NMOS:
VNDS=20V, IND=12A
RNDS(ON) < 26mΩ @ VGS=2.5V
RNDS(ON) < 20mΩ @ VGS=4.5V
◆ PMOS:
VPDS=-20V, IPD=-4.5A
RPDS(ON) < 100mΩ @ VGS=-2.5V
RPDS(ON) < 68mΩ @ VGS=-4.5V
◆ Super high density cell design
◆ Extremely Low Threshold Voltage
◆ Small package SOP-8