LPM2301 -20V/-2.6A P-Channel Enhancement Mode Field Effect Transistor
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LPM2301
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概述
The LPM2301 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
应用
◆ Portable Media Players ◆ Cellular and Smart mobile phone ◆ LCD ◆ DSC Sensor ◆\ Wireless Card
数据参数
数据参数
封装
SOT23
DS电压最大值(V)
-20
GS电压最大值(V)
±12
VGS（TH） -TYP(V)
-0.7
输出电流(A)
2
RDSON (mΩ) at VGS=2.5V （TYP)
170
RDSON (mΩ) at VGS=2.5V （MAX)
-
RDSON (mΩ) at VGS=4.5V （TYP)
130
RDSON (mΩ) at VGS=4.5V （MAX)
9
RDSON (mΩ) at VGS=10V （TYP)
-
RDSON (mΩ) at VGS=10V （MAX)
-
Category
Trench
特征
特征
◆ -20V/-2.6A,RDS(ON)=150mΩ(typ.)@VGS=-2.5V ◆ -20V/-2.6A,RDS(ON)=120mΩ(typ.)@VGS=-4.5V ◆ Super high density cell design for extremely low RDS(ON) ◆ SOT23 Package
