N-Channel Enhancement Mode Field Effect Transistor
规格书下载
转存邮件
LPM3400
转存邮件
概述
The LPM3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.1V. This device is suitable for use as a load switch or in PWM applications. Standard Product LPM3400 is Pb-free.
应用
◆ Driver for Relay, Solenoid, Motor, LED etc. ◆ DC-DC converter circuit ◆ Power Switch ◆ Load Switch ◆ Charging
数据参数
数据参数
封装
SOT23
DS电压最大值(V)
20
GS电压最大值(V)
±8
VGS（TH） -TYP(V)
1.1
输出电流(A)
4.2
RDSON (mΩ) at VGS=2.5V （TYP)
43
RDSON (mΩ) at VGS=2.5V （MAX)
52
RDSON (mΩ) at VGS=4.5V （TYP)
27
RDSON (mΩ) at VGS=4.5V （MAX)
33
RDSON (mΩ) at VGS=10V （TYP)
22
RDSON (mΩ) at VGS=10V （MAX)
28
Category
Trench
特征
特征
◆ 20V/5A, RDS(ON)＜33mΩ(max.)@VGS=4.5V ◆ 20V/4A, RDS(ON)＜52mΩ(max.)@VGS=2.5V ◆ Super high density cell design for extremely low RDS(ON) ◆ SOT23 Package
