The LPM9022 integrates two N-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9022 is Pb-free and Halogen-free.
应用
◆ Driver for Relay, Solenoid, Motor, LED etc. ◆ DC-DC converter circuit ◆ Power Switch ◆ Load Switch ◆ Charging
数据参数
数据参数
封装
DFN-8(2*3)
DS电压最大值(V)
20
VGS电压最大值(V)
12
VGS（TH） -TYP(V)
0.5
输出电流(A)
6
RDSON (mΩ) at VGS=2.5V （TYP)
-
RDSON (mΩ) at VGS=2.5V （MAX)
26
RDSON (mΩ) at VGS=4.5V （TYP)
-
RDSON (mΩ) at VGS=4.5V （MAX)
20
RDSON (mΩ) at VGS=10V （TYP)
-
RDSON (mΩ) at VGS=10V （MAX)
-
Category
Trench
特征
特征
◆ Trench Technology ◆ Single NMOS: VDS=20V, ID=6A RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V ◆ Super high density cell design ◆ Extremely Low Threshold Voltage ◆ Small package DFN-6L 2*3mm
