The LPM9024 integrates two N-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9024 is Pb-free and Halogen-free.
应用
◆ Driver for Relay, Solenoid, Motor, LED etc. ◆ DC-DC converter circuit ◆ Power Switch ◆ Load Switch ◆ Charging
数据参数
数据参数
封装
DFN-6(2*2)
DS电压最大值(V)
20
VGS电压最大值(V)
±10
VGS（TH） -TYP(V)
0.5
输出电流(A)
5
RDSON (mΩ) at VGS=2.5V （TYP)
-
RDSON (mΩ) at VGS=2.5V （MAX)
40
RDSON (mΩ) at VGS=4.5V （TYP)
-
RDSON (mΩ) at VGS=4.5V （MAX)
30
RDSON (mΩ) at VGS=10V （TYP)
-
RDSON (mΩ) at VGS=10V （MAX)
-
Category
Trench
特征
特征
◆ Trench Technology ◆ Single NMOS: VDS=20V RDS(ON) < 40mΩ @ VGS=2.5V, ID=5A RDS(ON) < 30mΩ @ VGS=4.5V, ID=5A ◆ Super high density cell design ◆ Extremely Low Threshold Voltage ◆ Small package DFN-6L 2*2mm
